Study of the ware out and breakdown of MOS structures based on multilayered high-k oxides

Abstract

The exponential growth of the electronics industry has been driven by an increase in the density of complementary metal-oxidesemiconductor (CMOS) transistors. But silicon-based transistor technology is close to the physical limits of miniaturization, threatening to end the microelectronics revolution. Currently, important technological advances are being made in terms of a new generation of devices based on an intelligent combination of selected materials. In this work, the wear out and breakdown of MOS devices based on multilayered high-k oxides is studied. The experimental results suggest that the use of oxides with a high thermal conductivity has a strong impact on the breakdown dynamics of the devices.