Reliability challenges in nano-electronic devices and RF circuits

Abstract

Silicon-based nanoelectronics are reaching the end of the roadmap. The introduction of novel materials into field effect devices, including high dielectric constant (HK) oxides and high mobility semiconductors (III-V) presents enormous potential to drive the next generation of nanoelectronic components, where one of the main challenges to tackle is their reliability. Additionally, the impact of thin oxide degradation on the circuit level becomes crucial as applications get more complex are forced to perform under demanding working conditions. This work presents a review of results regarding nanoelectronics reliability with an integral perspective, proposing physical explanations for the degradation of novel nano-electronic devices and generating strategies to guarantee the performance of radiofrequency integrated circuits against ageing.